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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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- Journal Article
- A1
- open access
Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs
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- Journal Article
- A1
- open access
3D backside integration of FinFETs : is there an impact on LF noise?
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- Journal Article
- A1
- open access
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
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The low-frequency noise behavior of advanced logic and memory devices
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- Journal Article
- A2
- open access
Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications
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- Journal Article
- A2
- open access
Tunnel-FET evolution and applications for analog circuits
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- Journal Article
- A1
- open access
Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers
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- Journal Article
- A1
- open access
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks