Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author exact 4DC5ED5A-2AE5-11E3-A4E0-796A10BDE39D or (type any "bookEditor journalEditor issueEdi... cql: keyword exact "traps"

Add to list
- Journal Article
- A1
- open access
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Hongyue Wang, Eddy Simoen (UGent) , Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang, et al.

(2023) DIAMOND AND RELATED MATERIALS. 138.
Add to list
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun Hsu, Eddy Simoen (UGent) , Hu Liang, Brice De Jaeger, Benoit Bakeroot (UGent) , Dirk Wellekens and Stefaan Decoutere

(2021) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 218(23).
Add to list
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

A. Vais, B. Hsu, O. Syshchyk, H. Yu, A. Alian, Y. Mols, V Kodandarama, K., B. Kunert, N. Waldron, Eddy Simoen (UGent) , et al.

(2021) 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
Add to list
- Journal Article
- A1
- open access
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen (UGent) , Stefan De Gendt, Arturo Sibaja-Hernandez and Jinyan Wang

(2021) JOURNAL OF APPLIED PHYSICS. 130(20).
Add to list
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833
Add to list
Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong Wang, Ming Zhao, Wei Li and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
Add to list
- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy Simoen (UGent) , Po-Chun (Brent) Hsu, A Alian, S El Kazzi and C Wang

(2019) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 34(7).
Add to list
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

S Gupta, Eddy Simoen (UGent) , R Loo, Q Smets, AS Verhulst, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) and M Heyns

(2018) APPLIED PHYSICS LETTERS. 113(23).
Add to list
- Journal Article
- A1
- open access
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

M Aouassa, Henk Vrielinck (UGent) and Eddy Simoen (UGent)

(2018) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 7(2). p.P24-P28
Add to list
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Mansour Aouassa, Henk Vrielinck (UGent) and Eddy Simoen (UGent)

(2017) SEMICONDUCTOR PROCESS INTEGRATION 10. In ECS Transactions 80(4). p.181-190

Academic Bibliography

Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Contents

Support

Contact