Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author exact 33B458AC-F0EE-11E1-A9DE-61C894A0A6B4 or (type any "bookEditor journalEditor issueEdi... cql: keyword exact "enhancement mode (e-mode)" Add to list Journal Article A1 Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent) (2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(2). p.169-175