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- Conference Paper
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- open access
0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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Constructing III-V nano-ridge photodetectors on silicon
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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- Conference Paper
- C3
- open access
III/V nano-ridge engineering for device integration on 300 mm silicon
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InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer
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III-V photonic devices on Si