Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author exact 0000-0002-0757-2509 or (type any "bookEditor issueEditor" and editor exact 0000-0002... cql: keyword exact "silicon" Add to list Journal Article A1 Use of neutron absorbers to influence the neutron transmutation doping process in silicon Jonas Vande Pitte, J. Wagemans, A. Gusarov, I. Uytdenhouwen, Christophe Detavernier (UGent) and Johan Lauwaert (UGent) (2020) NUCLEAR TECHNOLOGY. 206(5). p.758-765 Add to list Journal Article A1 open access Electrical properties of extended defects in strain relaxed GeSn Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al. (2018) APPLIED PHYSICS LETTERS. 113(2). Add to list Journal Article A1 open access Temperature-independent slow carrier emission from deep-level defects in p-type germanium Siegfried Segers (UGent) , Johan Lauwaert (UGent) , Paul Clauws (UGent) , Eddy Simoen, Jan Vanhellemont (UGent) , Freddy Callens (UGent) and Henk Vrielinck (UGent) (2013) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 46(42). Add to list Journal Article A1 What do we know about hydrogen-induced thermal donors in silicon? E Simoen, YL Huang, Y Ma, Johan Lauwaert (UGent) , Paul Clauws (UGent) , JM Rafi, A Ulyashin and C Claeys (2009) Journal of the Electrochemical Society. 156(6). p.H434-H442