Ghent University Academic Bibliography

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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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- Journal Article
- A1
- open access
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot (UGent) , Ming Zhao, Stefaan Decoutere and Martin Kuball

(2020) IEEE ELECTRON DEVICE LETTERS. 41(12). p.1754-1757
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580
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Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot (UGent) , Shuzhen You, Dirk Fahle, Herwig Hahn, et al.

(2020) IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. 33(4). p.534-538
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Weihang Zhang, Eddy Simoen (UGent) , Ming Zhao and Jincheng Zhang

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(4). p.1849-1855
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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong Wang, Ming Zhao, Wei Li and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Xiangdong Li, Ming Zhao, Benoit Bakeroot (UGent) , Karen Geens, Weiming Guo, Shuzhen You, Steve Stoffels, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.553-560
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The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Benoit Bakeroot (UGent) , Stefaan Decoutere and Martin Kuball

(2018) IEEE ELECTRON DEVICE LETTERS. 39(10). p.1580-1583

Academic Bibliography

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Reliability of p-GaN gate HEMTs in reverse conduction

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

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