Ghent University Academic Bibliography

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Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers

Xinpeng Zhang, Xiangyang Ma, Deren Yang and Jan Vanhellemont (UGent)

(2013) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 28(8).
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Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

Xinpeng Zhang, Maosen Fu, Xiangyang Ma, Deren Yang and Jan Vanhellemont (UGent)

(2013) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 210(12). p.2592-2599
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- Journal Article
- A1
- open access
Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

Xinpeng Zhang, Chao Gao, Maosen Fu, Xiangyang Ma, Jan Vanhellemont (UGent) and Deren Yang

(2013) JOURNAL OF APPLIED PHYSICS. 113(16).
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On the resistivity increase of heavily doped n-type Si by rapid thermal processing

Xinpeng Zhang, Xiangyang Ma, Chao Gao, Tao Xu, Jian Zhao, Peng Dong, Deren Yang and Jan Vanhellemont (UGent)

(2013) ECS Transactions. 52(1). p.683-689
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On the impact of heavy doping on grown-in defects in Czochralski-grown silicon

Xinpeng Zhang, W Xu, J Chen, Xiangyang Ma, Deren Yang, L Gong, D Tian and Jan Vanhellemont (UGent)

(2011) ECS Transactions. 34(1). p.1151-1157
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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Jan Vanhellemont (UGent) , XinPeng Zhang, WuBing Xu, JiaHe Chen, XiangYang Ma and DeRen Yang

(2010) JOURNAL OF APPLIED PHYSICS. 108(12).

Academic Bibliography

Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

On the resistivity increase of heavily doped n-type Si by rapid thermal processing

On the impact of heavy doping on grown-in defects in Czochralski-grown silicon

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

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