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Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers
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Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si
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- Journal Article
- A1
- open access
Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon
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On the resistivity increase of heavily doped n-type Si by rapid thermal processing
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On the impact of heavy doping on grown-in defects in Czochralski-grown silicon
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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon