Ghent University Academic Bibliography

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Surface-potential-based compact modeling of p-GaN gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot (UGent) , Jun Liu and Stefaan Decoutere

(2021) MICROMACHINES. 12(2).
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, et al.

(2021) MICROMACHINES. 12(4).
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Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Patrick Diehle, Susanne Huebner, Frank Altmann, et al.

(2021) MATERIALS. 14(9).
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Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot (UGent) , Jun Liu, Lingling Sun and Stefaan Decoutere

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(9). p.3564-3567
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Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

(2020) MATERIALS. 13(21).
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Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2020) 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, et al.

(2020) APPLIED PHYSICS EXPRESS. 13(2).

Academic Bibliography

Surface-potential-based compact modeling of p-GaN gate HEMTs

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Reliability of p-GaN gate HEMTs in reverse conduction

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

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