Ghent University Academic Bibliography

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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li Wu, Benoit Bakeroot (UGent) , Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon and Stefaan Decoutere

(2017) IEEE ELECTRON DEVICE LETTERS. 38(12). p.1696-1699
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot (UGent) , Xuanwu Kang, Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2016) 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Jie Hu, Steve Stoffels, Silvia Lenci, Tian-Li Wu, Nicolo Ronchi, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere

(2015) JAPANESE JOURNAL OF APPLIED PHYSICS. 54(7).
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Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot (UGent) , Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2015) IEEE ELECTRON DEVICE LETTERS. 36(10). p.1001-1003
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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Tian-Li Wu, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot (UGent) , Shuzhen You, Steve Stoffels, Marleen Van Hove, Davide Bisi, Matteo Meneghini and Guido Groeseneken

(2015) SOLID-STATE ELECTRONICS. 103. p.127-130
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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li Wu, Denis Marcon, Benoit Bakeroot (UGent) , Brice De Jaeger, HC Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove, Robin Roelofs, Guido Groeseneken, et al.

(2015) APPLIED PHYSICS LETTERS. 107(9).

Academic Bibliography

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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