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Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems
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- Journal Article
- A1
- open access
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells
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Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing
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Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
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High-k dielectrics for future generation memory devices (Invited Paper)
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications