Ghent University Academic Bibliography

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1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Sujit Kumar, Karen Geens, Anurag Vohra, Dirk Wellekens, Herwig Hahn, Benoit Bakeroot (UGent) , Niels Posthuma and Stefaan Decoutere

(2024) 47th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2024), Abstracts.
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- Journal Article
- A1
- open access
Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun Hsu, Eddy Simoen (UGent) , Hu Liang, Brice De Jaeger, Benoit Bakeroot (UGent) , Dirk Wellekens and Stefaan Decoutere

(2021) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 218(23).
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot (UGent) , Shuzhen You, Dirk Fahle, Herwig Hahn, et al.

(2020) IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. 33(4). p.534-538
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Benoit Bakeroot (UGent) , Steve Stoffels, Niels Posthuma, Dirk Wellekens and Stefaan Decoutere

(2019) 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). p.419-422
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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(9). p.3451-3458
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Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination

Lenci Silvia, Brice De Jaeger, Laureen Carbonell, Jie Hu, Geert Mannaert, Dirk Wellekens, Shuzhen You, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2013) IEEE ELECTRON DEVICE LETTERS. 34(8). p.1035-1037

Academic Bibliography

1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination

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