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Conductive filaments multiplicity as a variability factor in CBRAM
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Ge1-xSnx optical devices : growth and applications
(2014) SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. In ECS Transactions 64(6). p.677-687 -
Conductive-AFM tomography for 3D filament observation in resistive switching devices
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- journalArticle
- A1
- open access
On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction
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Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells
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- journalArticle
- A1
- open access
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
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High-k dielectrics for future generation memory devices (Invited Paper)
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Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
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Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer