Academic Bibliography

Show Sort by

Your filters: cql: author="Vandervorst, W" or (type exact bookEditor and editor="Vandervorst, W")

Mark
- conference
- P1
Conductive filaments multiplicity as a variability factor in CBRAM

U Celano, L Goux, A Belmonte, K Opsomer, Christophe Detavernier (UGent), M Jurczak and W Vandervorst

(2015) International Reliability Physics Symposium. In International Reliability Physics Symposium
Mark
- conference
- P1
Ge1-xSnx optical devices : growth and applications

Y Shimura, W Wang, W Vandervorst, F Gencarelli, A Gassenq, Günther Roelkens (UGent), A Vantomme, M Caymax and R Loo

(2014) SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. In ECS Transactions 64(6). p.677-687
Mark
On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

A Schrauwen, J Demeulemeester, A Kumar, W Vandervorst, CM Comrie, Christophe Detavernier (UGent), K Temst and A Vantomme

(2013) JOURNAL OF APPLIED PHYSICS. 114(6).
Mark
- conference
- P1
Conductive-AFM tomography for 3D filament observation in resistive switching devices

U Celano, L Goux, A Belmonte, A Schulze, Karl Opsomer (UGent), Christophe Detavernier (UGent), O Richard, H Bender, M Jurczak and W Vandervorst

(2013) 2013 IEEE international electron devices meeting (IEDM).
Mark
- conference
- P1
Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

L Goux, W Kim, Karl Opsomer (UGent), A Belmonte, G Kar, F De Stefano, VV Afanas'ev, U Celano, M Houssa, Wouter Devulder (UGent), et al.

(2013) ECS Transactions. In ECS Transactions 58(7). p.175-180
Mark
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Koen De Keyser (UGent), Charlotte Van Bockstael, Roland Vanmeirhaeghe (UGent), Christophe Detavernier (UGent), E Verleysen, H Bender, W Vandervorst, J Jordan-Sweet and C Lavoie

(2010) APPLIED PHYSICS LETTERS. 96(17).
Mark
- journalArticle
- A1
High-k dielectrics for future generation memory devices (Invited Paper)

JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, A Rothschild, et al.

(2009) MICROELECTRONIC ENGINEERING. 86(7-9). p.1789-1795
Mark
- journalArticle
- A1
Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, Geert Rampelberg (UGent), K Tomida, MA Pawlak, Christophe Detavernier (UGent), et al.

(2009) JOURNAL OF APPLIED PHYSICS. 106(9).
Mark
- conference
- P1
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

N Menou, XP Wang, B Kaczer, W Polspoel, M Popovici, K Opsomer, MA Pawlak, Werner Knaepen (UGent), Christophe Detavernier (UGent), T Blomberg, et al.

(2008) IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST. In International Electron Devices Meeting p.929-932
Mark
- journalArticle
- A1
Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Christophe Detavernier (UGent), Roland Vanmeirhaeghe (UGent), W VANDERVORST and K MAEX

(2004) MICROELECTRONIC ENGINEERING. 71(3-4). p.252-261

Academic Bibliography

Biblio has been updated

Conductive filaments multiplicity as a variability factor in CBRAM

Ge1-xSnx optical devices : growth and applications

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

Conductive-AFM tomography for 3D filament observation in resistive switching devices

Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

High-k dielectrics for future generation memory devices (Invited Paper)

Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Contents

Support

Contact