Ghent University Academic Bibliography

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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot (UGent) , S Stoffels, M Van Hove, G Groeseneken and S Decoutere

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860
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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004
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Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

TL Wu, D Marcon, B De Jaeger, M Van Hove, Benoit Bakeroot (UGent) , S Stoffels, G Groeseneken and S Decoutere

(2015) International Reliability Physics Symposium. In International Reliability Physics Symposium
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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, DN Lin, S Stoffels, XW Kang, R Roelofs, G Groeseneken, et al.

(2015) Proceedings of the International Symposium on Power Semiconductor Devices & ICs. In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.225-228
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On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Benoit Bakeroot (UGent) , S You, T-L Wu, J Hu, M Van Hove, B De Jaeger, K Geens, S Stoffels and S Decoutere

(2014) JOURNAL OF APPLIED PHYSICS. 116(13).
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Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

P Srivastava, H Oprins, M Van Hove, J Das, PE Malinowski, Benoit Bakeroot (UGent) , D Marcon, D Visalli, X Kang, S Lenci, et al.

(2011) 2011 IEEE International electron devices meeting (IEDM).
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- Journal Article
- A2
Aortaklepvervanging bij ouderen met symptomatisch aortakleplijden: bepalende factoren voor de overleving

W Mistiaen, PH Van Cauwelaert, Stanislas Sys (UGent) , PH Muylaert, M Van Hove, F Harrisson and Hilde Bortier

(2001) TIJDSCHRIFT VOOR CARDIOLOGIE. 13(2). p.46-53
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- Journal Article
- A1
Determinants of survival after aortic valve replacement as treatment for symptomatic aortic valve disease in the elderly.

WP MISTIAEN, P VAN CAUWELAERT, P MUYLAERT, M VAN HOVE, Stanislas Sys (UGent) , F HARRISSON, J BUNARTO, J DELARUELLE and Hilde Bortier

(2001) JOURNAL OF HEART VALVE DISEASE. 10(3). p.354-360

Academic Bibliography

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

Aortaklepvervanging bij ouderen met symptomatisch aortakleplijden: bepalende factoren voor de overleving

Determinants of survival after aortic valve replacement as treatment for symptomatic aortic valve disease in the elderly.

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