Ghent University Academic Bibliography

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Monolithic integration of microlenses on the backside of a silicon photonics chip for expanded beam coupling

Nivesh Mangal (UGent) , Bradley Snyder, Joris Van Campenhout, Geert Van Steenberge (UGent) and Jeroen Missinne (UGent)

(2021) Optics Express. 29(5). p.7601-7615
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56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode

Srinivasan Ashwyn Srinivasan (UGent) , Joris Lambrecht (UGent) , Davide Guermandi, Sebastien Lardenois, Mathias Berciano, Philippe Absil, Johan Bauwelinck (UGent) , Xin Yin (UGent) , Marianna Pantouvaki and Joris Van Campenhout

(2021) JOURNAL OF LIGHTWAVE TECHNOLOGY. 39(5). p.1409-1415
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Silicon circuits for chip-to-chip communications in multi-socket server board interconnects

Miltiadis Moralis-Pegios, Stelios Pitris, Charoula Mitsolidou, Konstantinos Fotiadis, Hannes Ramon (UGent) , Joris Lambrecht (UGent) , Johan Bauwelinck (UGent) , Xin Yin (UGent) , Yoojin Ban, Peter De Heyn, et al.

(2021) IET OPTOELECTRONICS. 15(2). p.102-110
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SiGe EAM-based transceivers for datacenter interconnects and radio over fiber

Laurens Bogaert (UGent) , Joris Van Kerrebrouck (UGent) , Laurens Breyne (UGent) , Joris Lambrecht (UGent) , Haolin Li (UGent) , Kasper Van Gasse (UGent) , Jochem Verbist (UGent) , Michael Vanhoecke (UGent) , Hannes Ramon (UGent) , Srinivasan Ashwyn Srinivasan, et al.

(2021) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 27(3).
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Impact of optical free-carrier generation on the performance of SOI phase shifters

Clemens Krückel (UGent) , Joris Van Campenhout and Dries Van Thourhout (UGent)

(2020) 2020 Conference on Lasers and Electro-Optics (CLEO). In Conference on Lasers and Electro-Optics
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Expanded-beam backside coupling interface for alignment-tolerant packaging of silicon photonics

Nivesh Mangal (UGent) , Bradley Snyder, Joris Van Campenhout, Geert Van Steenberge and Jeroen Missinne (UGent)

(2020) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 26(2).
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Ball lens embedded through-package via to enable backside coupling between silicon photonics interposer and board-level interconnects

Nivesh Mangal (UGent) , Jeroen Missinne (UGent) , Joris Van Campenhout, Bradley Snyder and Geert Van Steenberge (UGent)

(2020) JOURNAL OF LIGHTWAVE TECHNOLOGY.
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High speed graphene-silicon electro-absorption modulators for the O-band and C-band

Chiara Alessandri (UGent) , Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout (UGent) and Marianna Pantouvaki

(2020) JAPANESE JOURNAL OF APPLIED PHYSICS. 59(5).
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5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators

Chiara Alessandri (UGent) , Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout (UGent) and Marianna Pantouvaki

(2020) APPLIED OPTICS. 59(4). p.1156-1162
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Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

Yuting Shi (UGent) , Lisa C. Kreuzer, Nils C. Gerhardt, Marianna Pantouvaki, Joris Van Campenhout, Marina Baryshnikova, Robert Langer, Dries Van Thourhout (UGent) and Bernardette Kunert

(2020) JOURNAL OF APPLIED PHYSICS. 127(10).

Academic Bibliography

Monolithic integration of microlenses on the backside of a silicon photonics chip for expanded beam coupling

56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode

Silicon circuits for chip-to-chip communications in multi-socket server board interconnects

SiGe EAM-based transceivers for datacenter interconnects and radio over fiber

Impact of optical free-carrier generation on the performance of SOI phase shifters

Expanded-beam backside coupling interface for alignment-tolerant packaging of silicon photonics

Ball lens embedded through-package via to enable backside coupling between silicon photonics interposer and board-level interconnects

High speed graphene-silicon electro-absorption modulators for the O-band and C-band

5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators

Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

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