Ghent University Academic Bibliography

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- Conference Paper
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A Local Search Algorithm For The Inventory Matching Problem In A Steel Company

Birger Raa (UGent) and W VAN DER STRICHT

(2006) INCOM'2006 Preprints Volume II Industrial Engineering. p.359-364
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- Journal Article
- A1
Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).

MF WU, A VANTOMME, S HOGG, G LANGOUCHE, W VAN DER STRICHT, K JACOBS and Ingrid Moerman (UGent)

(2001) NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 174(1-2). p.181-186
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- Journal Article
- A1
Indium segregation in InGaN quantum-well structures.

N DUXBURY, U BANGERT, P DAWSON, EJ THRUSH, W VAN DER STRICHT, K JACOBS and Ingrid Moerman (UGent)

(2000) APPLIED PHYSICS LETTERS. 76(12). p.1600-1602
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- Journal Article
- A1
Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers.

KP O'DONNELL, RW MARTIN, PG MIDDLETON, SC BAYLISS, I FLETCHER, W VAN DER STRICHT, Piet Demeester (UGent) and Ingrid Moerman (UGent)

(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.288-291
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- Journal Article
- P1
High indium content InGaN films and quantum wells.

W VAN DER STRICHT, Koen Jacobs, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH, J CRAWLEY and P RUTERANA

(1998) NITRIDE SEMICONDUCTORS. p.107-112
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- Journal Article
- A1
Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire.

KP O'DONNELL, PG MIDDLETON, C TRAGER-COWAN, C YOUNG, SC BAYLISS, I FLETCHER, W VAN DER STRICHT, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1998) APPLIED PHYSICS LETTERS. 73(22). p.3273-3275
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- Journal Article
- A1
Growth and in situ monitoring of GaN using IR interference effects.

L CONSIDINE, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , GH PARK, SJ HWANG and JJ SONG

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.192-198
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- Journal Article
- A1
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.

A MOHAMMED, C TRAGER-COWAN, PG MIDDLETON, KP O'DONNELL, W VAN DER STRICHT, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1997) MICROSCOPY OF SEMICONDUCTING MATERIALS. 157. p.235-238
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- Journal Article
- A1
The optical linewidth of InGaN light emitting diodes.

PG MIDDLETON, KP O'DONNELL, T BREITKOPF, H KALT, W VAN DER STRICHT, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1997) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 50(1-3). p.285-288

Academic Bibliography

A Local Search Algorithm For The Inventory Matching Problem In A Steel Company

Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).

Indium segregation in InGaN quantum-well structures.

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers.

High indium content InGaN films and quantum wells.

Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire.

Growth and in situ monitoring of GaN using IR interference effects.

Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.

The optical linewidth of InGaN light emitting diodes.

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