Ghent University Academic Bibliography

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- Journal Article
- A1
Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFI, E SIMOEN, C CLAEYS, YL HUANG, AG ULYASHIN, R JOB, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2005) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 152(1).
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- Journal Article
- A1
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEON, C CLAEYS, R LOO, Olivier De Gryse, Paul Clauws (UGent) , R JOB, AG ULYASHIN and W FAHRNER

(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212
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- Journal Article
- A1
Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2003) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 150(9).
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- Conference Paper
- P1
Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFI, E SIMOEN, C CLAEYS, AG ULYASHIN, R JOB, WR FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES. 2003(3). p.96-105
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- Journal Article
- A1
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, Olivier De Gryse and Paul Clauws (UGent)

(2002) APPLIED PHYSICS LETTERS. 81(10). p.1842-1844
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- Conference Paper
- P1
The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2002) SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002(2). p.912-924

Academic Bibliography

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

Analysis of oxygen thermal donor formation in n-type Cz silicon

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

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