Ghent University Academic Bibliography

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Low temperature anneal of electron irradiation induced defects in p type silicon.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VAN BAVEL, G LANGOUCHE and Paul Clauws (UGent)

(1998) MATERIALS SCIENCE AND TECHNOLOGY. 14(12). p.1295-1298
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- Journal Article
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Study of point defects in silicon by means of positron annihilation with core electrons

J Kuriplach, Toon Van Hoecke (UGent) , B Van Waeyenberge, Charles Dauwe (UGent) , Danny Segers (UGent) , N Balcaen, AL Morales, MA Trauwaert, Jan Vanhellemont (UGent) and M Sob

(1997) Materials Science Forum. 255(2). p.605-607
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- Journal Article
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Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS and Paul Clauws (UGent)

(1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.196-199
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- Journal Article
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LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE and Paul Clauws (UGent)

(1995) APPLIED PHYSICS LETTERS. 66(22). p.3057-3058
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- Journal Article
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On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS and Paul Clauws (UGent)

(1995) ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4. 196-. p.1147-1151
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- Journal Article
- A1
GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

J VANHELLEMONT, A KANIAVA, E SIMOEN, MA TRAUWAERT, C CLAEYS, B JOHLANDER, R HARBOESORENSEN, L ADAMS and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(3) 479-486 Part 1).
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- Journal Article
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FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

J VANHELLEMONT, MA TRAUWAERT, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1993) APPLIED PHYSICS LETTERS. 62(3). p.309-311
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1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

J VANHELLEMONT, MA TRAUWAERT, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1992) THIN SOLID FILMS. 222(1-2). p.166-172
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Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes

MA Trauwaert, Jan Vanhellemont (UGent) , Eddy Simoen (UGent) , C Claeys, B Johlander, L Adams and Paul Clauws (UGent)

(1992) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 39(6, Part 1). p.1747-1753

Academic Bibliography

Low temperature anneal of electron irradiation induced defects in p type silicon.

Study of point defects in silicon by means of positron annihilation with core electrons

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes

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