Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Save this search Download search results Subscribe to news feed Your filters: cql: author="Tallarico, A. N." or (type any "bookEditor issueEditor" and editor="Tallarico, A. N.") Add to list Journal Article Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna (2020) MICROELECTRONICS RELIABILITY. 114. Add to list Journal Article A1 Gate reliability of p-GaN HEMT with gate metal retraction A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna (2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835 Add to list Conference Paper P1 Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al. (2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium Add to list Conference Paper P1 Failure mode for p-GaN gates under forward gate stress with varying Mg concentration S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico and C. Fiegna (2017) 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium