Ghent University Academic Bibliography

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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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Gate reliability of p-GaN HEMT with gate metal retraction

A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al.

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico and C. Fiegna

(2017) 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

Academic Bibliography

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

Gate reliability of p-GaN HEMT with gate metal retraction

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

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