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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate
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- Journal Article
- A1
- open access
P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime
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- Journal Article
- A1
- open access
TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
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- Journal Article
- A1
- open access
High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
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Gate reliability of p-GaN HEMT with gate metal retraction
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
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Failure mode for p-GaN gates under forward gate stress with varying Mg concentration