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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 -
Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer.
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The optical and structural properties of InGaN epilayers with very high indium content.
(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297 -
Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.
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Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire.
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Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.
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Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer