Ghent University Academic Bibliography

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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Eiji Kamiyama, Ryo Matsutani, Ryo Suwa, Jan Vanhellemont (UGent) and Koji Sueoka

(2016) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 43. p.209-213
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- Miscellaneous
Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun Kissinger, Eddy Simoen (UGent) , Cor Claeys, Paul Clauws (UGent) , Piotr Śpiewak, Koji Sueoka and Deren Yang

(2016) Physica Status Solidi C-Current Topics in Solid State Physics. 13(10-12). p.706-711
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- Journal Article
- A1
- open access
A statistical model describing temperature dependent gettering of Cu in p-type Si

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2015) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 4(7). p.P232-P235
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- Journal Article
- A1
- open access
Estimation of the temperature dependent interaction between uncharged point defects in Si

Eiji Kamiyama, Jan Vanhellemont (UGent) and Koji Sueoka

(2015) AIP ADVANCES. 5(1).
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- Book Chapter
Vacancies in Si and Ge

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2015) Silicon, germanium, and their alloys : growth, defects, impurities, and nanocrystals. p.119-158
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Intrinsic point defect behavior close to silicon melt/solid interface

Jan Vanhellemont (UGent) , Eiji Kamiyama, Kozo Nakamura and Koji Sueoka

(2015) Semiconductor Technology International Conference (CSTIC).
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- Miscellaneous
Comment on 'Experimental study of the impact of stress on the point defect incorporation during silicon growth' [ECS Solid State Lett., 3, N5 (2014)]

Jan Vanhellemont (UGent) , Eiji Kamiyama and Koji Sueoka

(2014) ECS SOLID STATE LETTERS. 3(5). p.X3-X4
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An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2014) PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 251(11). p.2185-2188
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Stress and doping impact on intrinsic point defects in silicon and germanium

Jan Vanhellemont (UGent) , Eiji Kamiyama and Koji Sueoka

(2014) AIP Conference Proceedings. In AIP Conference Proceedings 1583. p.8-12
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Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2014) AIP Conference Proceedings. In AIP Conference Proceedings 1583. p.60-63

Academic Bibliography

The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Jan Vanhellemont : 35 years of materials research in microelectronics

A statistical model describing temperature dependent gettering of Cu in p-type Si

Estimation of the temperature dependent interaction between uncharged point defects in Si

Vacancies in Si and Ge

Intrinsic point defect behavior close to silicon melt/solid interface

Comment on 'Experimental study of the impact of stress on the point defect incorporation during silicon growth' [ECS Solid State Lett., 3, N5 (2014)]

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

Stress and doping impact on intrinsic point defects in silicon and germanium

Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

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