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- Journal Article
- A1
- open access
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
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- Conference Paper
- P1
- open access
Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
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Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs