Ghent University Academic Bibliography

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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo Borga, Carlo De Santi, S. Stoffels, Benoit Bakeroot (UGent) , Xiangdong Li, M. Zhao, M. Van Hove, S. Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, et al.

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(2). p.595-599
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Gate reliability of p-GaN HEMT with gate metal retraction

A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al.

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

N. Ronchi, Benoit Bakeroot (UGent) , S. You, J. Hu, S. Stoffels, T.-L. Wu, B. De Jaeger and S. Decoutere

(2017) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 214(3).
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Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico and C. Fiegna

(2017) 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Device breakdown optimization of Al2O3/GaN MISFETs

X. Kang, D. Wellekens, M. Van Hove, B. De Jaeger, N. Ronchi, T. -L. Wu, S. You, Benoit Bakeroot (UGent) , J. Hu, D. Marcon, et al.

(2016) 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

Academic Bibliography

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Gate reliability of p-GaN HEMT with gate metal retraction

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Device breakdown optimization of Al2O3/GaN MISFETs

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