- Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells
- Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.
1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.196-199 Mark(
- On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.