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104 Gbaud OOK and PAM-4 Transmission over 1km of SMF using a Silicon Photonics Transmitter with Quarter-Rate Electronics
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Aerosol-jet printed interconnects for 2.5 D electronic and photonic integration
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High active phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors : toward Group-IV optical interconnects
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Ge epitaxial growth in view of optical device applications
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- Conference Paper
- P1
- open access
Laser annealed in-situ P-doped Ge for on-chip laser source applications
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Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures
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Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors