Ghent University Academic Bibliography

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104 Gbaud OOK and PAM-4 transmission over 1km of SMF using a silicon photonics transmitter with quarter-rate electronics

Jochem Verbist, Mads Lillieholm, Joris Van Kerrebrouck (UGent) , Ashwyn Srinivasan, Peter De Heyn, Joris Van Campenhout, Michael Galili, Leif K. Oxenlowe, Xin Yin (UGent) , Johan Bauwelinck (UGent) , et al.

(2019) 2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC).
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Aerosol-jet printed interconnects for 2.5 D electronic and photonic integration

Ahmed Elmogi, Wouter Soenen (UGent) , Hannes Ramon, Xin Yin (UGent) , Jeroen Missinne (UGent) , Silvia Spiga, Markus-Christian Amann, Ashwyn Srinivasan, Peter De Heyn, Joris Van Campenhout, et al.

(2018) JOURNAL OF LIGHTWAVE TECHNOLOGY. 36(16). p.3528-3533
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- Conference Paper
- C3
High active phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors : toward Group-IV optical interconnects

Rik Van Deun (UGent) , Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout (UGent) , M Pantouvaki, J Van Campenhout and Roger Loo

(2016) 9th International workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program joint seminar, Abstracts.
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- Conference Paper
- P1
- open access
Laser annealed in-situ P-doped Ge for on-chip laser source applications

Ashwyn Srinivasan, Marianna Pantouvaki, Yosuke Shimura, Clement Porret, Rik Van Deun (UGent) , Roger Loo, Dries Van Thourhout (UGent) and Joris Van Campenhout

(2016) Silicon photonics and photonic integrated circuits V. In Proceedings of SPIE 9891.
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- Conference Paper
- C3
Ge epitaxial growth in view of optical device applications

Rik Van Deun (UGent) , Roger Loo, Ashwyn Srinivasan, C Porret, Dries Van Thourhout (UGent) , T Stoica, D Buca and J Van Campenhout

(2016) 9th International workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program joint seminar, Abstracts.
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- Conference Paper
- C3
Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

Rik Van Deun (UGent) , Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout (UGent) , M Pantouvaki, Joris Van Campenhout and Roger Loo

(2015) E-MRS fall meeting, Abstracts.
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- Conference Paper
- C3
Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

Rik Van Deun (UGent) , Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout (UGent) , M Pantouvaki, Joris Van Campenhout and Roger Loo

(2015) EcoTopia Science, Symposium abstracts.

Academic Bibliography

104 Gbaud OOK and PAM-4 transmission over 1km of SMF using a silicon photonics transmitter with quarter-rate electronics

Aerosol-jet printed interconnects for 2.5 D electronic and photonic integration

High active phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors : toward Group-IV optical interconnects

Laser annealed in-situ P-doped Ge for on-chip laser source applications

Ge epitaxial growth in view of optical device applications

Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

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