Ghent University Academic Bibliography

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Your filters: cql: author="Simoen, Eddy*" or (type exact bookEditor and editor="Simoen, Eddy*")

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Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Eddy Simoen (UGent) , Anabela Veloso, Philippe Matagne and Cor Claeys

(2023) SOLID-STATE ELECTRONICS. 200.
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Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(1). p.254-260
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3D backside integration of FinFETs : is there an impact on LF noise?

Eddy Simoen (UGent) , Anne Jourdain, Cor Claeys and Anabela Veloso

(2023) SOLID-STATE ELECTRONICS. 207.
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Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Hongyue Wang, Eddy Simoen (UGent) , Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang, et al.

(2023) DIAMOND AND RELATED MATERIALS. 138.
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The low-frequency noise behavior of advanced logic and memory devices

Eddy Simoen (UGent) , Romain Ritzenthaler, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi, Adrian Vaisman, Nouredine Rassoul, Gouri Sankar Kar and Cor Claeys

(2022) 2022 China Semiconductor Technology International Conference (CSTIC).
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Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications

Eddy Simoen (UGent) , Carlos H.S. Coelho, Vanessa C.P. da Silva, João A. Martino, Paula Ghedini Der Agopian, Alberto Oliveira, Bogdan Cretu and Anabela Veloso

(2022) JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS. 17(2).
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Tunnel-FET evolution and applications for analog circuits

Paula Ghedini Der Agopian, Joao A. Martino, Eddy Simoen (UGent) , Rita Rooyackers and Cor Claeys

(2022) JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS. 17(2).
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Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

P.-C. (Brent) Hsu, Eddy Simoen (UGent) , Geert Eneman, Clement Merckling, Yves Mols and Marc Heyns

(2022) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 219(17).
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NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Duan Xie, Eddy Simoen (UGent) , Hiroaki Arimura, Elena Capogreco, Jerome Mitard and Naoto Horiguchi

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(12). p.6985-6990
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui Wang, Tianhan Xu, Eddy Simoen (UGent) , Bogdan Govoreanu, Cor Claeys and Yang Zhang

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(3). p.948-953

Academic Bibliography

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

3D backside integration of FinFETs : is there an impact on LF noise?

Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

The low-frequency noise behavior of advanced logic and memory devices

Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications

Tunnel-FET evolution and applications for analog circuits

Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

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