Ghent University Academic Bibliography

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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan Xie, Eddy Simoen (UGent) , Haifeng Chen, Hiroaki Arimura and Naoto Horiguchi

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4713-4719
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P.-C. Hsu, Eddy Simoen (UGent) , D. Lin, A. Stesmans, L. Goux, R. Delhougne, P. Carolan, H. Bender and G. S. Kar

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(4).
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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

C. Claeys, P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, et al.

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(3).
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Device performance as a metrology tool to detect metals in silicon

Cor Claeys and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Weihang Zhang, Eddy Simoen (UGent) , Ming Zhao and Jincheng Zhang

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(4). p.1849-1855
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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong Wang (UGent) , Ming Zhao, Wei Li and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy Simoen (UGent) , Po-Chun (Brent) Hsu, A Alian, S El Kazzi and C Wang

(2019) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 34(7).
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- Journal Article
- A1
- open access
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

C Claeys, R Ritzenthaler, T Schram, H Arimura, N Horiguchi and Eddy Simoen (UGent)

(2019) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 8(2). p.N25-N31

Academic Bibliography

Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

Device performance as a metrology tool to detect metals in silicon

Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

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