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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
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- Journal Article
- A1
- open access
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
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Frontiers in low-frequency noise research in advanced semiconductor devices
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Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
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Trap identification on n-channel GAA NW FETs
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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers