Ghent University Academic Bibliography

Your filters: cql: author="Shimura, Yosuke" or (type any "bookEditor issueEditor" and editor="Shimura, Yosuke")

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Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy

Richard Ciesielski, Janusz Bogdanowicz, Roger Loo (UGent) , Yosuke Shimura, Antonio Mani, Christoph Mitterbauer, Michael Kolbe and Victor Soltwisch

(2024) JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3. 23(4).
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Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures

Richard Ciesielski, Roger Loo (UGent) , Yosuke Shimura, Janusz Bogdanowicz, Antonio Mani, Christoph Mitterbauer, Vinh-Binh Truong, Michael Kolbe and Victor Soltwisch

(2024) METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII. In Proceedings of SPIE 12955.
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Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Clement Porret, Erik Rosseel, Anjani Akula, Yosuke Shimura, Thomas Dursap, Andriy Hikavyy, Hans Mertens, Naoto Horiguchi and Robert Langer

(2024) ECS Meeting Abstracts.
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Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke Shimura, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan Aguilera, Georgios Katsaros, Paola Favia, Han Han, Danny Wan, Kristiaan De Greve, et al.

(2024) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 174.
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Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Xiaoyu Piao, Erik Rosseel, Thierry Conard, Andrea Impagnatiello, Yosuke Shimura, Naoto Horiguchi, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
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Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28
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Epitaxial SiGe/Si multi-stacks for complementary FET devices

Roger Loo (UGent) , Anjani Akula, Clement Porret, Dong Wang, Keisuke Yamamoto, Tamás Sipőcz, Árpád Kerekes, Alex Merkulov, Mustafa Ayyad, Han Han, et al.

(2023) 14th International workshop on New Group IV Semiconductor Nanoelectronics, Proceedings.
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On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications

Sathish kumar Dhayalan, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen (UGent) , Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Roger Loo and Wilfried Vandervorst

(2018) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 7(5). p.P228-P237
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Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2018) APPLIED PHYSICS LETTERS. 113(2).
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Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

Yosuke Shimura, Srinivasan Ashwyn Srinivasan (UGent) and Roger Loo

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(5). p.Q140-Q143

Academic Bibliography

Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy

Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Compressively strained epitaxial Ge layers for quantum computing applications

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Epitaxial SiGe/Si multi-stacks for complementary FET devices

On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications

Electrical properties of extended defects in strain relaxed GeSn

Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

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