Ghent University Academic Bibliography

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- Journal Article
- A1
- open access
Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, A. Merkulov, M. Ayyad, I. Lee, et al.

(2025) JOURNAL OF APPLIED PHYSICS. 138(5).
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Inline X-ray metrology for complementary field-effect transistors (CFET)

J. Bogdanowicz, A. Mingardi, V. Brissonneau, Roger Loo (UGent) , Y. Shimura, A. Akula, P. P. Gowda, D. Zhou, N. Horiguchi, S. Biesemans, et al.

(2025) SPIE Advanced Lithography and Patterning Conference : Metrology, Inspection, and Process Control XXXIX, Abstracts.
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- Miscellaneous
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

I. Fattal, J. Van Damme, B. Raes, C. Godfrin, G. Jaliel, K. Chen, T. Van Caekenberghe, A. Loenders, S. Kubicek, S. Massar, et al.

(2025)
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- Journal Article
- A1
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , A. Akula, Y. Shimura, C. Porret, E. Rosseel, T. Dursap, A. Y. Hikavyy, M. Beggiato, J. Bogdanowicz, A. Merkulov, et al.

(2025) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 14(1).
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- Conference Paper
- C3
- open access
Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions

J. Bogdanowicz, A.-L. Charley, M. Saib, M. Beggiato, G. Lorusso, V. Brissonneau, E. Dupuy, Roger Loo (UGent) , Y. Shimura, A. Akula, et al.

(2024) International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2024), Abstracts.
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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
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- Conference Paper
- P1
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Reduction of optical bleaching in phosphorus doped ge layer on si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP). In IEEE International Conference on Group IV Photonics p.53-54
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- Conference Paper
- P1
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Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). In IEEE Photonics Conference p.311-312

Academic Bibliography

Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Inline X-ray metrology for complementary field-effect transistors (CFET)

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Reduction of optical bleaching in phosphorus doped ge layer on si

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

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