Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="Schaekers, Marc" or (type exact bookEditor and editor="Schaekers, Marc")

Add to list
- Journal Article
- A1
- open access
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

Qi Xie (UGent) , Davy Deduytsche (UGent) , Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G20-G22
Add to list
- Conference Paper
- C3
- open access
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert Rampelberg (UGent) , Marc Schaekers, Koen Martens, Qi Xie (UGent) , Davy Deduytsche (UGent) , Bob De Schutter (UGent) , Nicolas Blasco, Jorge Kittl and Christophe Detavernier (UGent)

(2011) Atomic Layer Deposition, 11th International conference, Abstracts.
Add to list
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert Rampelberg (UGent) , Marc Schaekers, Koen Martens, Qi Xie (UGent) , Davy Deduytsche (UGent) , Bob De Schutter (UGent) , Nicolas Blasco, Jorge Kittl and Christophe Detavernier (UGent)

(2011) APPLIED PHYSICS LETTERS. 98(16).
Add to list
High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

Qi Xie (UGent) , ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2011) IEEE ELECTRON DEVICE LETTERS. 32(12). p.1656-1658
Add to list
- Journal Article
- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G27-G30
Add to list
- Journal Article
- A1
- open access
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng (UGent) , Qi Xie, Davy Deduytsche (UGent) , Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu and Christophe Detavernier (UGent)

(2011) APPLIED PHYSICS LETTERS. 99(5).
Add to list
- Journal Article
- A1
- open access
Thermal trimming and tuning of hydrogenated amorphous silicon nano-photonic devices

shankar kumar Selvaraja (UGent) , Wim Bogaerts (UGent) , Dries Van Thourhout (UGent) and Marc Schaekers (UGent)

(2010) APPLIED PHYSICS LETTERS. 97(7).
Add to list
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie (UGent) , Davy Deduytsche (UGent) , Marc Schaekers, Matty Caymax, Annelies Delabie, Xiin-Ping Qu and Christophe Detavernier (UGent)

(2010) APPLIED PHYSICS LETTERS. 97(11).
Add to list
Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yy-Long Jiang, Sven Van den Berghe, JunHu Liu and Christophe Detavernier (UGent)

(2010) APPLIED PHYSICS LETTERS. 97(22).
Add to list
Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry

shankar kumar Selvaraja (UGent) , Erik Sleeckx, Marc Schaekers, Wim Bogaerts (UGent) , Dries Van Thourhout (UGent) , Pieter Dumon (UGent) and Roel Baets (UGent)

(2009) OPTICS COMMUNICATIONS. 282(9). p.1767-1770

← Previous

Academic Bibliography

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Thermal trimming and tuning of hydrogenated amorphous silicon nano-photonic devices

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry

Contents

Support

Contact