Ghent University Academic Bibliography

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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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- Journal Article
- A1
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TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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Gate reliability of p-GaN HEMT with gate metal retraction

A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835

Academic Bibliography

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

Gate reliability of p-GaN HEMT with gate metal retraction

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