Ghent University Academic Bibliography

Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Eliana Acurio, Felice Crupi, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot (UGent) , Stefaan Decoutere and Lionel Trojman

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(2). p.883-889

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Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Eliana Acurio, Felice Crupi, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot (UGent) , Stefaan Decoutere and Lionel Trojman

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(5). p.1765-1770

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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li Wu, Benoit Bakeroot (UGent) , Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon and Stefaan Decoutere

(2017) IEEE ELECTRON DEVICE LETTERS. 38(12). p.1696-1699

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Conference Paper
P1
open access

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Nicolo Ronchi, Benoit Bakeroot (UGent) , Shuzhen You, Jie Hu, Steve Stoffels and Stefaan Decoutere

(2016) 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS).

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Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Brice De Jaeger, Shuzen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere

(2016) 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS).

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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(9). p.3451-3458

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Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Jie Hu, Steve Stoffels, Silvia Lenci, Tian-Li Wu, Nicolo Ronchi, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere

(2015) JAPANESE JOURNAL OF APPLIED PHYSICS. 54(7).

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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Tian-Li Wu, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot (UGent) , Shuzhen You, Steve Stoffels, Marleen Van Hove, Davide Bisi, Matteo Meneghini and Guido Groeseneken

(2015) SOLID-STATE ELECTRONICS. 103. p.127-130

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Journal Article
A1
open access

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere

(2014) MICROELECTRONICS RELIABILITY. 54(9-10). p.2196-2199

Academic Bibliography

Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

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