Ghent University Academic Bibliography

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Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, D. Wan, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, et al.

(2026) 2026 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2026. In International Reliability Physics Symposium p.1-6
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- Miscellaneous
Defect-centric modeling of capacitance-voltage characteristics of SiGe/Si/SiGe heterostructures at cryogenic temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, A. Grill, et al.

(2025)
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- Miscellaneous
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

I. Fattal, J. Van Damme, B. Raes, C. Godfrin, G. Jaliel, K. Chen, T. Van Caekenberghe, A. Loenders, S. Kubicek, S. Massar, et al.

(2025)
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300 mm production compatible fabrication of quantum computing devices

Stefan Kubicek, S. Beyne, S. Sharma, S. Massar, C. Godfrin, B. Raes, A. Loenders, J. Jussot, Y. Hermans, Y. Li, et al.

(2025) Joint ICSI/ISTDM 2025 Conference.
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300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

S. Beyne, S. Kubicek, C. Godfrin, B. Raes, T. Van Caekenberghe, J. De Backer, Y. Hermans, F. Treska, S. Kaushik, Y. Jiang, et al.

(2025) 2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM. In IEEE International Electron Devices Meeting

Academic Bibliography

Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

Defect-centric modeling of capacitance-voltage characteristics of SiGe/Si/SiGe heterostructures at cryogenic temperatures

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

300 mm production compatible fabrication of quantum computing devices

300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

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