Ghent University Academic Bibliography

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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

E Gaubas, A Uleckas, JM Rafi, J Chen, D Yang and Jan Vanhellemont (UGent)

(2012) PHYSICA B-CONDENSED MATTER. 407(15). p.2998-3001
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.347-352
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- Journal Article
- A1
- open access
Germanium doping for improved silicon substrates and devices

Jan Vanhellemont (UGent) , Jiahe Chen, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , W Xu, Deren Yang, JM Rafi, Hidenori Ohyama and Eddy Simoen

(2011) JOURNAL OF CRYSTAL GROWTH. 317(1). p.8-15
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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

JM Rafi, Jan Vanhellemont (UGent) , E Simoen, J Chen, M Zabala and F Campabadal

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4723-4726
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Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

H Ohyama, JM Rafi, F Campabadal, K Takakura, E Simoen, J Chen and Jan Vanhellemont (UGent)

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4671-4673
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What do we know about hydrogen-induced thermal donors in silicon?

E Simoen, YL Huang, Y Ma, Johan Lauwaert (UGent) , Paul Clauws (UGent) , JM Rafi, A Ulyashin and C Claeys

(2009) Journal of the Electrochemical Society. 156(6). p.H434-H442
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Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

K Takakura, D Koga, H Ohyama, JM Rafi, Y Kayamoto, M Shibuya, H Yamamoto and Jan Vanhellemont (UGent)

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4854-4857
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- Journal Article
- A1
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

YL HUANG, E SIMOEN, C CLAEYS, JM RAFI and Paul Clauws (UGent)

(2007) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 18(7). p.705-710
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- Journal Article
- A1
Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

YL HUANG, E SIMOEN, C CLAEYS, JM RAFI, Paul Clauws (UGent) , R JOB and WR FAHRNER

(2006) APPLIED PHYSICS LETTERS. 89(3).
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- Journal Article
- A1
Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFI, E SIMOEN, C CLAEYS, YL HUANG, AG ULYASHIN, R JOB, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2005) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 152(1).

Academic Bibliography

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Germanium doping for improved silicon substrates and devices

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

What do we know about hydrogen-induced thermal donors in silicon?

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

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