Ghent University Academic Bibliography

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Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering

Matteo Borga, Niels Posthuma, Anurag Vohra, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2024) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 221(21).
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1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Sujit Kumar, Karen Geens, Anurag Vohra, Dirk Wellekens, Herwig Hahn, Benoit Bakeroot (UGent) , Niels Posthuma and Stefaan Decoutere

(2024) 47th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2024), Abstracts.
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- Journal Article
- A1
- open access
Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Benoit Bakeroot (UGent) , Steve Stoffels, Niels Posthuma, Dirk Wellekens and Stefaan Decoutere

(2019) 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). p.419-422
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Benoit Bakeroot (UGent) , Arno Stockman, Niels Posthuma, Steve Stoffels and Stefaan Decoutere

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(1). p.79-86
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li Wu, Benoit Bakeroot (UGent) , Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon and Stefaan Decoutere

(2017) IEEE ELECTRON DEVICE LETTERS. 38(12). p.1696-1699
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Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot (UGent) , Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2015) IEEE ELECTRON DEVICE LETTERS. 36(10). p.1001-1003

Academic Bibliography

Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering

1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

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