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Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering
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1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates
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- Journal Article
- A1
- open access
Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
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Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors