Ghent University Academic Bibliography

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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660
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TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Gate reliability of p-GaN HEMT with gate metal retraction

A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al.

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

Academic Bibliography

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Gate reliability of p-GaN HEMT with gate metal retraction

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

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