Ghent University Academic Bibliography

Your filters: cql: author="Porret, Clement" or (type any "bookEditor issueEditor" and editor="Porret, Clement")

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Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) APL MATERIALS. 14(4).
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Source/drain and silicides for nanosheet device applications

Clement Porret, Thomas Dursap, Bert Pollefliet, Alex Merkulov and Roger Loo (UGent)

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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Epitaxial growth of strain relaxed SiGe layers with GeCl4

Yosuke Shimura, Clement Porret, Danny Wan, Kristiaan De Greve and Roger Loo (UGent)

(2025) Joint ICSI/ISTDM 2025 Conference. p.153-154
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Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert Pollefliet, Clement Porret, Olivier Richard, Jean-Luc Everaert, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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Low temperature SiGe:B source/drain epitaxy for CFET applications

Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi and Roger Loo (UGent)

(2025) Joint ICSI/ISTDM 2025 Conference.
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Analysis of the Sc silicide formation mechanisms by medium-energy ion scattering

André Vantomme, Radek Holenak, Kevin Vomschee, Eleni Ntemou, Tuan Tran, Bert Pollefliet, Clement Porret, Roger Loo (UGent) , Clement Merckling and Daniel Primetzhofer

(2025) 27th Ion Beam Analysis (IBA) & 19th Particle-Induced X-ray Emission (PIXE) joint international conferences, Abstracts.
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Ge epitaxy on Si (001) using halide-based chemical vapor deposition

Ambrishkumar J. Devaiya, Omar Concepción, Clement Porret, Daniel McDermott, Andreas T. Tiedemann, Jinyoun Cho, Kristof Dessin, Sanjay Mathur, Detlev Grützmacher, Dan Buca, et al.

(2025) Joint ICSI/ISTDM 2025 Conference. p.169-170
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Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50
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Source/drain epitaxy and contact silicides for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Olivier Richard, Paola Favia, et al.

(2025) ECS Meeting Abstracts. MA2025-02(36). p.1741-1741
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64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed Kandeel (UGent) , Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo (UGent) , Mathias Berciano, Chih-Kuo Neil Tseng, Dharmander Malik, Alexey Milenin, et al.

(2025) JOURNAL OF LIGHTWAVE TECHNOLOGY. 43(6). p.2794-2802

Academic Bibliography

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Source/drain and silicides for nanosheet device applications

Epitaxial growth of strain relaxed SiGe layers with GeCl4

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Low temperature SiGe:B source/drain epitaxy for CFET applications

Analysis of the Sc silicide formation mechanisms by medium-energy ion scattering

Ge epitaxy on Si (001) using halide-based chemical vapor deposition

Source/drain epitaxy and contacts for CFET applications

Source/drain epitaxy and contact silicides for CFET applications

64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

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