Ghent University Academic Bibliography

Your filters: cql: author="Porret, C." or (type any "bookEditor issueEditor" and editor="Porret, C.")

Add to list
Low temperature SiGe:B source/drain epitaxy for CFET applications

T. Dursap, C. Porret, A. Merkulov, P. Favia, R. Langer, M.-S. Kim, N. Hiroguchi and Roger Loo (UGent)

(2025) 16th International workshop on New Group IV Semiconductor Nanoelectronics, Abstracts. p.11-12
Add to list
SiGe:B Source/Drain epitaxy for advanced device applications

T. Dursap, C. Porret, E. Rosseel, A. Akula, A. Pondini, H. Mertens, J. Ganguly, R. Sarkar, N. Horiguchi, R. Langer, et al.

(2025) European Conference on Innovative and Advanced Epitaxy, Abstracts. p.43-43
Add to list
- Miscellaneous
JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement

Roger Loo (UGent) , Y. Shimura, H. Kuwazuru, K. Yamamoto, D. Wang, C. Porret, T. Dursap, A. Akula, D. Schippers, O. Nakatsuka, et al.

(2025) p.1-2
Add to list
- Journal Article
- A1
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , A. Akula, Y. Shimura, C. Porret, E. Rosseel, T. Dursap, A. Y. Hikavyy, M. Beggiato, J. Bogdanowicz, A. Merkulov, et al.

(2025) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 14(1).
Add to list
Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
Add to list
- Conference Paper
- P1
- open access
Reduction of optical bleaching in phosphorus doped ge layer on si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP). In IEEE International Conference on Group IV Photonics p.53-54
Add to list
- Conference Paper
- P1
- open access
Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). In IEEE Photonics Conference p.311-312

Academic Bibliography

Low temperature SiGe:B source/drain epitaxy for CFET applications

SiGe:B Source/Drain epitaxy for advanced device applications

JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Reduction of optical bleaching in phosphorus doped ge layer on si

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Contents

Support

Contact