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- Journal Article
- A1
- open access
Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
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Epitaxial SiGe/Si multi-stacks for complementary FET devices
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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si
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- Journal Article
- A1
- open access
Electrical properties of extended defects in strain relaxed GeSn
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- Conference Paper
- C1
- open access
High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers
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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si
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- Conference Paper
- P1
- open access
Reduction of optical bleaching in phosphorus doped ge layer on si
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- Conference Paper
- P1
- open access
Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
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- Conference Paper
- P1
- open access
Laser annealed in-situ P-doped Ge for on-chip laser source applications
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Ge epitaxial growth in view of optical device applications