Ghent University Academic Bibliography

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Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

Bert Pollefliet, Clement Porret, Alex Merkulov, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 214.
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- Journal Article
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Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) APL MATERIALS. 14(4).
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Formation and texture of ScSi from Sc thin films deposited on Si substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Alex Merkulov, Marta Agati, Roger Loo (UGent) , Christophe Detavernier (UGent) , et al.

(2026) JOURNAL OF APPLIED PHYSICS. 140(2).
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- C3
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Source/drain and silicides for nanosheet device applications

Clement Porret, Thomas Dursap, Bert Pollefliet, Alex Merkulov and Roger Loo (UGent)

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert Pollefliet, Clement Porret, Olivier Richard, Jean-Luc Everaert, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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Analysis of the Sc silicide formation mechanisms by medium-energy ion scattering

André Vantomme, Radek Holenak, Kevin Vomschee, Eleni Ntemou, Tuan Tran, Bert Pollefliet, Clement Porret, Roger Loo (UGent) , Clement Merckling and Daniel Primetzhofer

(2025) 27th Ion Beam Analysis (IBA) & 19th Particle-Induced X-ray Emission (PIXE) joint international conferences, Abstracts.
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Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50
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Source/drain epitaxy and contact silicides for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Olivier Richard, Paola Favia, et al.

(2025) ECS Meeting Abstracts. MA2025-02(36). p.1741-1741
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Texture of orthorhombic ScSi in annealed TiN / Sc / Si(:P)(001) contact stacks

Bert Pollefliet, Clement Porret, Christophe Detavernier (UGent) , Jean-Luc Everaert, Kiroubanand Sankaran, Erik Rosseel, Roger Loo (UGent) , André Vantomme and Clement Merckling

(2024) 2024 International Conference on Solid State Devices and Materials, Abstracts.
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Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Xiaoyu Piao, Erik Rosseel, Thierry Conard, Andrea Impagnatiello, Yosuke Shimura, Naoto Horiguchi, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).

Academic Bibliography

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Formation and texture of ScSi from Sc thin films deposited on Si substrates

Source/drain and silicides for nanosheet device applications

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Analysis of the Sc silicide formation mechanisms by medium-energy ion scattering

Source/drain epitaxy and contacts for CFET applications

Source/drain epitaxy and contact silicides for CFET applications

Texture of orthorhombic ScSi in annealed TiN / Sc / Si(:P)(001) contact stacks

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

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