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Wafer‐scale integration of single layer graphene electro‐absorption modulators in a 300 mm CMOS pilot line
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- Journal Article
- A1
- open access
Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision
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- Journal Article
- A1
- open access
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
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- Conference Paper
- C1
- open access
Integration of quantum dot lasers with SOI waveguides using micro transfer printing
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- Journal Article
- A1
- open access
Efficient resonance management in ultrahigh-Q 1D photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform
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- Journal Article
- A1
- open access
Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer
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Hybrid graphene-WS2 Mach-Zehnder modulator on passive silicon waveguide
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- Conference Paper
- P1
- open access
0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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Constructing III-V nano-ridge photodetectors on silicon
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer