Ghent University Academic Bibliography

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Graphene absorber on an SOI chip for active and passive mode locking of lasers

Tom Reep (UGent) , Cheng-Han Wu, Didit Yudistira, Steven Brems, Inge Asselberghs, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout (UGent) and Bart Kuyken (UGent)

(2025) SCIENTIFIC REPORTS. 15(1).
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Low-loss phase modulation using a MoS2 monolayer integrated on silicon waveguides

Cheng-Han Wu, Tom Reep (UGent) , Yishu Huang (UGent) , Steven Brems, Christian Haffner, Cedric Huyghebaert, Bart Kuyken (UGent) , Joris Van Campenhout, Marianna Pantouvaki, Dries Van Thourhout (UGent) , et al.

(2025) 2D MATERIALS. 12(4).
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GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Yannick De Koninck, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Oezdemir, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci (UGent) , et al.

(2025) NATURE. 637(8044).
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64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed Kandeel (UGent) , Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo (UGent) , Mathias Berciano, Chih-Kuo Neil Tseng, Dharmander Malik, Alexey Milenin, et al.

(2025) JOURNAL OF LIGHTWAVE TECHNOLOGY. 43(6). p.2794-2802
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Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir, Yannick De Koninck (UGent) , Saroj Kanta Patra, Marina Baryshnikova, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout and Dries Van Thourhout (UGent)

(2024) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 57(40).
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Dual single layer graphene Mach-Zehnder modulator with high efficiency and gigahertz bandwidth

Chenghan Wu, Yishu Huang (UGent) , Steven Brems, Christian Haffner, Inge Asselberghs, Joris Van Campenhout, Zheng Wang (UGent) , Marianna Pantouvaki and Dries Van Thourhout (UGent)

(2023) Graphene Week 2023, Abstracts.
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High-efficiency dual single layer graphene modulator integrated on slot waveguides

Cheng-Han Wu, Tom Reep (UGent) , Steven Brems, Julien Jussot, Vivek Mootheri, Joris Van Campenhout, Cedric Huyghebaert, Marianna Pantouvaki, Zheng Wang (UGent) and Dries Van Thourhout (UGent)

(2023) OPTICS EXPRESS. 31(22). p.36872-36882
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Wafer‐scale integration of single layer graphene electro‐absorption modulators in a 300 mm CMOS pilot line

Chenghan Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, et al.

(2023) LASER & PHOTONICS REVIEWS. 17(6).
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Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision

Aleksandrs Marinins, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, et al.

(2023) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 29(3).
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Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform

Younghyun Kim, Didit Yudistira, Bernardette Kunert, Marina Baryshnikova, Reynald Alcotte, Cenk Ibrahim Özdemir, Sanghyeon Kim, Sebastien Lardenois, Peter Verheyen, Joris Van Campenhout, et al.

(2022) PHOTONICS RESEARCH. 10(6). p.1509-1516

Academic Bibliography

Graphene absorber on an SOI chip for active and passive mode locking of lasers

Low-loss phase modulation using a MoS2 monolayer integrated on silicon waveguides

GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Dual single layer graphene Mach-Zehnder modulator with high efficiency and gigahertz bandwidth

High-efficiency dual single layer graphene modulator integrated on slot waveguides

Wafer‐scale integration of single layer graphene electro‐absorption modulators in a 300 mm CMOS pilot line

Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision

Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform

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