Ghent University Academic Bibliography

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An experimental demonstration of a passively mode-locked laser using an integrated graphene saturable absorber

Tom Reep (UGent) , Cheng-Han Wu (UGent) , Ewoud Vissers (UGent) , S. Brems, D. Yudistira, Joris Van Campenhout, M. Pantouvaki, Dries Van Thourhout (UGent) and Bart Kuyken (UGent)

(2022) IEEE Benelux Photonics Chapter - Annual Symposium 2022. p.197-200
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- Conference Paper
- C1
- open access
Saturable absorption of a double layer graphene modulator on a slot waveguide

Tom Reep (UGent) , Cheng-Han Wu (UGent) , Zheng Wang (UGent) , S. Brems, Stéphane Clemmen (UGent) , C. Huyghebaert, J. Van Campenhout, M. Pantouvaki, Dries Van Thourhout (UGent) and Bart Kuyken (UGent)

(2022) 2022 IEEE Photonics Conference (IPC).
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- Conference Paper
- C3
- open access
III/V nano-ridge engineering for device integration on 300 mm silicon

B. Kunert, Davide Colucci (UGent) , M. Baryshnikova, Y. Mols, R. Alcotte, Dries Van Thourhout (UGent) , Cenk Ibrahim Özdemir (UGent) , Y. De Koninck, N. Kuznetsova, D. Yudistira, et al.

(2021) Compound Semiconductor Week (CSW-2021), Abstracts.
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GaAs nano-ridge lasers on silicon (invited)

Yuting Shi, M. Baryshnikova, Y. De Koninck, M. Pantouvaki, J. Van Campenhout, B. Kunert and Dries Van Thourhout (UGent)

(2020) SPIE Photonics West Conference, Abstracts. In Proceedings of SPIE 11284.
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InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer

Cenk Ibrahim Özdemir (UGent) , Y. De Koninck, N. Kuznetsova, M. Baryshnikova, Dries Van Thourhout (UGent) , B. Kunert, M. Pantouvaki and J. Van Campenhout

(2020) 2020 IEEE Photonics Conference (IPC). In IEEE Photonics Conference
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- C3
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Prospects for hybrid integration of Si and SiN waveguides with graphene and other 2D-materials

Chiara Alessandri, Cheng-Han Wu (UGent) , Frédéric Peyskens (UGent) , I. Asselberghs, S. Brems, C. Huyghebaert, J. Van Campenhout, M. Pantouvaki and Dries Van Thourhout (UGent)

(2020) OSA Advanced Photonics Congress, Abstracts.
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- Conference Paper
- P1
- open access
Highly sensitive 56 Gbps NRZ O-band BiCMOS-silicon photonics receiver using a Ge/Si avalanche photodiode

Srinivasan Ashwyn Srinivasan (UGent) , Joris Lambrecht (UGent) , M. Berciano, S. Lardenois, P. Absil, Johan Bauwelinck (UGent) , Xin Yin (UGent) , M. Pantouvaki and J. Van Campenhout

(2020) 2020 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC). In OSA Technical Digest
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Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator

Yoojin Ban (UGent) , Jochem Verbist, Michael Vanhoecke (UGent) , Johan Bauwelinck (UGent) , P. Verheyen, S. Lardenois, M. Pantouvaki and Joris Van Campenhout

(2019) 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI). In Optical Interconnects Conference p.1-2
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Gaining an edge with nano-ridges

B. Kunert, R. Langer, M. Pantouvaki, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) COMPOUND SEMICONDUCTOR. 24(5). p.36-41
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Optical gain characterization of nano-ridge amplifiers epitaxially on a standard si wafer

Yuting Shi, B. Kunert, M. Baryshnikova, M. Pantouvaki, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) 2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO). In Conference on Lasers and Electro-Optics

Academic Bibliography

An experimental demonstration of a passively mode-locked laser using an integrated graphene saturable absorber

Saturable absorption of a double layer graphene modulator on a slot waveguide

III/V nano-ridge engineering for device integration on 300 mm silicon

GaAs nano-ridge lasers on silicon (invited)

InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer

Prospects for hybrid integration of Si and SiN waveguides with graphene and other 2D-materials

Highly sensitive 56 Gbps NRZ O-band BiCMOS-silicon photonics receiver using a Ge/Si avalanche photodiode

Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator

Gaining an edge with nano-ridges

Optical gain characterization of nano-ridge amplifiers epitaxially on a standard si wafer

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