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- Journal Article
- A1
- open access
Detailed structural and electrical characterization of plated crystalline silicon solar cells
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Spectral current–voltage analysis of kesterite solar cells
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Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells
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- Journal Article
- A1
- open access
Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
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- Conference Paper
- C1
- open access
Organic solar cell strategy and developments in Flanders
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Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
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IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.
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INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.
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ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.
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GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.
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FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.
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1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.
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Semiconductor strained layers and their applications