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The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures
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Determination of optical constants of thin films in the EUV
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- Journal Article
- A1
- open access
Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements
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- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2
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- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)
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- Journal Article
- A2
- open access
Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
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- Journal Article
- A2
- open access
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
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- Journal Article
- A1
- open access
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles
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Selective electroless deposition of cobalt using amino-terminated SAMs
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- Conference Paper
- C1
- open access
Doped and un-doped GeSe2 for OTS : Raman spectroscopy and electrical measurements