Ghent University Academic Bibliography

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Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

Jonas Keukelier (UGent) , Wouter Devulder, Stefanie Sergeant, Thomas Nuytten, Johan Meersschaut, Karl Opsomer and Christophe Detavernier (UGent)

(2024) JOURNAL OF NON-CRYSTALLINE SOLIDS. 644.
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- Conference Paper
- C3
- open access
The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures

Seppe Van Dyck (UGent) , Jonas Keukelier (UGent) , Wouter Devulder, Karl Opsomer and Christophe Detavernier (UGent)

(2022) MAM 2022, Materials for Advanced Metallization, Abstracts.
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Determination of optical constants of thin films in the EUV

Richard Ciesielski, Qais Saadeh, Vicky Philipsen, Karl Opsomer, Jean-Philippe Soulie, Meiyi Wu, Philipp Naujok, Robbert W. E. van de Kruijs, Christophe Detavernier (UGent) , Michael Kolbe, et al.

(2022) APPLIED OPTICS. 61(8). p.2060-2078
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- Journal Article
- A1
- open access
Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Jonas Keukelier (UGent) , Karl Opsomer, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF APPLIED PHYSICS. 130(16).
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- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

Jonas Keukelier (UGent) , Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF MATERIALS CHEMISTRY C. 9(1). p.117-126
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- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

Jonas Keukelier (UGent) , Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF MATERIALS CHEMISTRY C. 9(2). p.736-736
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- Journal Article
- A2
- open access
Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Meiyi Wu, Jean-Francois de Marneffe, Karl Opsomer (UGent) , Christophe Detavernier (UGent) , Annelies Delabie, Philipp Naujok, Oezge Caner, Andy Goodyear, Mike Cooke, Qais Saadeh, et al.

(2021) MICRO AND NANO ENGINEERING. 12.
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- Journal Article
- A2
- open access
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

Ali Haider, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean-Marc Girard, Gabriel Khalil El Hajjam, Gouri Sankar Kar, Karl Opsomer, Christophe Detavernier (UGent) , Michael Givens, et al.

(2021) MATERIALS ADVANCES. 2(5). p.1635-1643
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- Journal Article
- A1
- open access
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles

Sergiu Clima, Daniele Garbin, Karl Opsomer, Naga S. Avasarala, Wouter Devulder, Ilya Shlyakhov, Jonas Keukelier (UGent) , Gabriele L. Donadio, Thomas Witters, Shreya Kundu, et al.

(2020) PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. 14(5).
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Selective electroless deposition of cobalt using amino-terminated SAMs

Ivan Zyulkov, Silvia Armini, Karl Opsomer, Christophe Detavernier (UGent) and Stefan De Gendt

(2019) JOURNAL OF MATERIALS CHEMISTRY C. 7(15). p.4392-4402

Academic Bibliography

Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures

Determination of optical constants of thin films in the EUV

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles

Selective electroless deposition of cobalt using amino-terminated SAMs

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