Ghent University Academic Bibliography

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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.347-352
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Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

H Ohyama, JM Rafi, F Campabadal, K Takakura, E Simoen, J Chen and Jan Vanhellemont (UGent)

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4671-4673
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Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

K Takakura, D Koga, H Ohyama, JM Rafi, Y Kayamoto, M Shibuya, H Yamamoto and Jan Vanhellemont (UGent)

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4854-4857
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- Journal Article
- A1
IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

H OHYAMA, J VANHELLEMONT, Y TAKAMI, K HAYAMA, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1995) MATERIALS SCIENCE AND TECHNOLOGY. 11(4). p.429-435
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- Journal Article
- A1
INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

H OHYAMA, J VANHELLEMONT, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 143(1). p.183-193
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- Journal Article
- A1
ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

H OHYAMA, J VANHELLEMONT, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(3) 487-494 Part 1).
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- Journal Article
- A1
GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

H OHYAMA, J VANHELLEMONT, Y TAKAMI, K HAYAMA, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(6) 2437-2442 Part 1).

Academic Bibliography

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

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