Show
Sort by
-
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
-
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
-
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
-
IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.
-
INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.
-
ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.
-
GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.