Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="O'DONNELL, KP" or (type any "bookEditor journalEditor issueEditor" and editor="O'DONNELL,...

Add to list
- Journal Article
- A1
The dependence of the optical energies on InGaN composition.

KP O'DONNELL, RW MARTIN, C TRAGER-COWAN, ME WHITE, K ESONA, C DEATCHER, PG MIDDLETON, Koen Jacobs, Wim Van der Stricht, C MERLET, et al.

(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196
Add to list
- Journal Article
- A1
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer.

L NISTOR, H BENDER, A VANTOMME, MF WU, J VAN LANDUYT, KP O'DONNELL, R MARTIN, K JACOBS and Ingrid Moerman (UGent)

(2000) APPLIED PHYSICS LETTERS. 77(4). p.507-509
Add to list
- Journal Article
- A1
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

A Vantomme, MF Wu, S Hogg, G Langouche, K Jacobs, Ingrid Moerman (UGent) , ME White, KP O'Donnell, L Nistor, J Van Landuyt, et al.

(2000) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 5(suppl. 1). p.U604-U609
Add to list
- Journal Article
- A1
Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-Cowan, D McColl, F Sweeney, STF Grimson, JF Treguer, A Mohammed, PG Middleton, SK Manson-Smith, KP O'Donnell, Wim Van der Stricht, et al.

(2000) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 5(suppl. 1). p.U347-U352
Add to list
- Journal Article
- A1
Exciton localization and the Stokes' shift in InGaN epilayers.

RW MARTIN, PG MIDDLETON, KP O'DONNELL and Wim Van der Stricht

(1999) APPLIED PHYSICS LETTERS. 74(2). p.263-265
Add to list
- Journal Article
- A1
Confocal microscopy and spectroscopy of InGaN epilayers on sapphire.

KP O'DONNELL, MJ TOBIN, SC BAYLISS and Wim Van der Stricht

(1999) JOURNAL OF MICROSCOPY-OXFORD.
Add to list
- Conference Paper
- C1
Intrinsic infrared luminescence from InGaN layers.

KP O'DONNELL, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van der Stricht and Koen Jacobs

(1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p.44-45
Add to list
- Journal Article
- A1
Intrinsic infrared luminescence from InGaN epilayers.

KP O'DONNELL, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van der Stricht and Koen Jacobs

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.141-144
Add to list
- Journal Article
- A1
Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.

KP O'DONNELL, ME WHITE, S PEREIRA, MF WU, A VANTOMME, Wim Van der Stricht and Koen Jacobs

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.171-174
Add to list
- Conference Paper
- C1
Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.

KP O'DONNELL, ME WHITE, S PEREIRA, MF WU, A VANTOMME, Wim Van der Stricht and Koen Jacobs

(1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France.

Academic Bibliography

The dependence of the optical energies on InGaN composition.

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer.

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Probing nitride thin films in 3-dimensions using a variable energy electron beam

Exciton localization and the Stokes' shift in InGaN epilayers.

Confocal microscopy and spectroscopy of InGaN epilayers on sapphire.

Intrinsic infrared luminescence from InGaN layers.

Intrinsic infrared luminescence from InGaN epilayers.

Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.

Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.

Contents

Support

Contact