Ghent University Academic Bibliography

Your filters: cql: author="Moens, Peter" or (type any "bookEditor issueEditor" and editor="Moens, Peter")

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- Journal Article
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Complications of charge pumping analysis for silicon carbide MOSFETs

Jan Lettens (UGent) , Fredrik Allerstam, Jimmy Franchi, Sofie Cambré, Etienne Goovaerts, Henk Vrielinck (UGent) and Peter Moens

(2023) MATERIALS SCIENCE FORUM. 1090. p.171-178
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Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(2). p.169-175
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A physical-statistical approach to AlGaN/GaN HEMT reliability

Peter Moens and Arno Stockman

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)

(2019) 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.287-290
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Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

A. Tajalli, E. Canato, A. Nardo, M. Meneghini, Arno Stockman, Peter Moens, E. Zanoni and G. Meneghesso

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

Arno Stockman, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot (UGent) and Peter Moens

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(12). p.5365-5372
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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on

Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot (UGent) and Peter Moens

(2017) 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). In Proceedings of the European Solid-State Device Research Conference p.130-133
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Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , Piet Vanmeerbeek and Peter Moens

(2008) IEEE TRANSACTIONS ON ELECTRON DEVICES. 55(1). p.435-445
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- Conference Paper
- P1
A new substrate current free nLIGBT for junction isolated technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) and Peter Moens

(2004) ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE. p.461-464
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- Conference Paper
- C1
Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.

Benoit Bakeroot (UGent) , Miguel Vermandel (UGent) , Jan Doutreloigne (UGent) , Peter Moens and D BOLOGNESI

(2002) Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002. p.291-294

Academic Bibliography

Complications of charge pumping analysis for silicon carbide MOSFETs

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

A physical-statistical approach to AlGaN/GaN HEMT reliability

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

A new substrate current free nLIGBT for junction isolated technologies

Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.

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